Controlled doping of semiconductors leads to highly reproducible transistors with precisely tunable device characteristics 1, which is witnessed by the success of inorganic metal-oxide-semiconductor ...
Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect ...
Device scaling is getting much harder at each new process node. Even defining what it means is becoming a challenge. In the past, gate length and metal pitch went down and device density went up.
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