(RTTNews) - Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM. This innovation ...
A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...
RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...
Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...
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