Abstract: In this work, the robust single-event irradiation-hardened capability is demonstrated in a novel 4H-SiC split gate integrated PN MOSFET (SGPN-MOSFET). The gate of the proposed SiC MOSFET was ...
Abstract: The split-gate (SG) silicon carbide (SiC) MOSFETs with excellent high-frequency (HF) characteristics have been prepared, but studies on their reliability are scarce. The degradation of the ...
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