The tensily strained high Ge content (85%) GeSi multi-channels stacked on the Si channel with channel size optimization have good subthreshold behaviors (SS, DIBL, and Ioff), and meanwhile maintain ...
Abstract: We demonstrate for the first time, vertical Ge 0.92 Sn 0.08 /Ge and Ge gate-all-around (GAA) nanowire (NW) pMOSFETs fabricated with a CMOS compatible top-down approach. Vertical Ge NWs with ...
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