In 2022, through the collaboration with Oppo, Innoscience introduced 40V bi-directional VGaNTM that became the first GaN power device to be adopted in smartphones, marking a significant milestone …

InnoScience (Suzhou) Technology Holding Co., Ltd. (Innoscience; Chinese: 英诺赛科; pinyin: Yīngnuò Sàikē) is a publicly listed Chinese semiconductor company headquartered in Suzhou, Jiangsu.

Aug 4, 2025 · When NVIDIA released its supplier list last week for the 800 VDC power architecture powering AI data centers, GaN power chipmaker Innoscience stood out as the only Chinese supplier, …

Dec 2, 2025 · Summary: onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices using …

Nov 9, 2024 · Innoscience was found to have infringed on one of the challenged patents held by EPC, according to the ITC's final determination released on Thursday. The agency issued a limited …

Mar 31, 2025 · Innoscience (HKEX:02577.HK) is the global leader in gallium nitride process innovation and power device manufacturing. Innoscience’s device design and performance set the worldwide …

Jan 2, 2026 · It offers GaN wafers, discrete chips, integrated circuits, and modules for use in consumer electronics, renewable energy and industrial, automotive electronics, and data centers applications. …

Dec 30, 2024 · In 2023, based on shipments of gallium nitride discrete devices, Innoscience will rank first among global gallium nitride power semiconductor companies in terms of market share, with a …

Jan 7, 2025 · InnoScience aims to use 60% of the IPO’s net proceeds of HK$1.3bn to expand capacity for its 8-inch GaN wafers over the next five years from 12,500 wafers per month in 2024 to …

Mar 24, 2025 · Through the series of victories at the ITC and PTAB, Innoscience has shown that it is determined to defend its leading position in the fast growing GaN power device market and remains …